? semiconductor components industries, llc, 2008 september, 2008 ? rev. 6 1 publication order number: nid5003n/d nid5003n preferred device self-protected fet with temperature and current limit 42 v, 20 a, single n ? channel, dpak hdplus devices are an advanced series of power mosfets which utilize on semiconductors latest mosfet technology process to achieve the lowest possible on ? resistance per silicon area while incorporating smart features. integrated thermal and current limits work together to provide short circuit protection. the devices feature an integrated drain ? to ? gate clamp that enables them to withstand high energy in the avalanche mode. the clamp also provides additional safety margin against unexpected voltage transients. electrostatic discharge (esd) protection is provided by an integrated gate ? to ? source clamp. features ? short circuit protection/current limit ? thermal shutdown with automatic restart ? i dss specified at elevated temperature ? avalanche energy specified ? slew rate control for low noise switching ? overvoltage clamped protection mosfet maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain ? to ? source voltage internally clamped v dss 42 vdc gate ? to ? source voltage v gs 14 vdc drain current continuous i d internally limited total power dissipation @ t a = 25 c (note 1) @ t a = 25 c (note 2) p d 1.3 2.3 w thermal resistance junction ? to ? case junction ? to ? ambient (note 1) junction ? to ? ambient (note 2) r jc r ja r ja 3.0 95 54 c/w single pulse drain ? to ? source avalanche energy (v dd = 25 vdc, v gs = 5.0 vdc, i l = 2.6 apk, l = 120 mh, r g = 25 ) e as 400 mj operating and storage temperature range (note 3) t j , t stg ? 55 to 150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted onto minimum pad size (0.412 square) fr4 pcb, 1 oz cu. 2. mounted onto 1 square pad size (1.127 square) fr4 pcb, 1 oz cu. 3. normal pre ? fault operating range. see thermal limit range conditions. device package shipping ? ordering information nid5003nt4 dpak 2500/tape & reel dpak case 369c style 2 m pwr drain source temperature limit gate input marking diagram d5003n = device code y = year ww = work week g = pb ? free device current limit current sense r g overvoltage protection esd protection preferred devices are recommended choices for future use and best overall value. http://onsemi.com yww d 5003ng *max current may be limited below this value depending on input conditions. 1 = gate 2 = drain 3 = source 1 2 3 v dss (clamped) r ds(on) typ i d max (limited) 42 v 42 m @ 10 v 20 a* ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. http://onsemi.com NID5003NT4G dpak (pb ? free) 2500/tape & reel
nid5003n http://onsemi.com 2 mosfet electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain ? to ? source clamped breakdown voltage (v gs = 0 vdc, i d = 250 adc) (v gs = 0 vdc, i d = 250 adc, t j = ? 40 c to 150 c) v (br)dss 42 40 46 45 51 51 vdc zero gate voltage drain current (v ds = 32 vdc, v gs = 0 vdc) (v ds = 32 vdc, v gs = 0 vdc, t j = 150 c) i dss ? ? 0.6 2.5 5.0 ? adc gate input current (v gs = 5.0 vdc, v ds = 0 vdc) i gssf ? 50 125 adc on characteristics gate threshold voltage (v ds = v gs , i d = 1.2 madc) threshold temperature coefficient v gs(th) 1.0 ? 1.7 5.0 2.2 ? vdc ? mv/ c static drain ? to ? source on ? resistance (note 4) (v gs = 10 vdc, i d = 3.0 adc, t j @ 25 c) (v gs = 10 vdc, i d = 3.0 adc, t j @ 150 c) r ds(on) ? ? 42 76 51 104 m static drain ? to ? source on ? resistance (note 4) (v gs = 5.0 vdc, i d = 3.0 adc, t j @ 25 c) (v gs = 5.0 vdc, i d = 3.0 adc, t j @ 150 c) r ds(on) ? ? 50 88 58 125 m source ? drain forward on voltage (i s = 7.0 a, v gs = 0 v) v sd ? 0.95 1.1 v switching characteristics turn ? on time (v in to 90% i d ) r l = 4.7 v in = 0 to 10 v, v dd = 12 v t (on) ? 16 20 s turn ? off time (v in to 10% i d ) r l = 4.7 v in = 0 to 10 v, v dd = 12 v t (off) ? 80 100 slew rate on r l = 4.7 , v in = 0 to 10 v, v dd = 12 v ? dv ds /dt on ? 1.4 ? v s slew rate off r l = 4.7 , v in = 10 to 0 v, v dd = 12 v dv ds /dt off ? 0.5 ? v s self protection characteristics (t j = 25 c unless otherwise noted) (note 5) current limit (v gs = 5.0 vdc) v ds = 10 v (v gs = 5.0 vdc, t j = 150 c) i lim 12 7 18 13 24 18 adc current limit (v gs = 10 vdc) v ds = 10 v (v gs = 10 vdc, t j = 150 c) i lim 18 13 22 18 30 25 temperature limit (turn ? off) v gs = 5.0 vdc t lim(off) 150 175 200 c thermal hysteresis v gs = 5.0 vdc t lim(on) ? 15 ? c temperature limit (turn ? off) v gs = 10 vdc t lim(off) 150 165 185 c thermal hysteresis v gs = 10 vdc t lim(on) ? 15 ? c esd electrical characteristics (t j = 25 c unless otherwise noted) electro ? static discharge capability human body model (hbm) machine model (mm) esd 4000 400 ? ? ? ? v 4. pulse test: pulse width 300 s, duty cycle 2%. 5. fault conditions are viewed as beyond the normal operating range of the part.
nid5003n http://onsemi.com 3 typical performance curves 100 c 0 35 20 3 1 v ds , drain ? to ? source voltage (volts) i d, drain current (amps) 15 5 0 figure 1. on ? region characteristics 12 5 4 0 figure 2. transfer characteristics v gs , gate ? to ? source voltage (volts) 0.3 46 0.5 0 figure 3. on ? resistance vs. gate ? to ? source voltage v gs , gate ? to ? source voltage (volts) r ds(on), drain ? to ? source resistance ( ) i d, drain current (amps) 0.05 figure 4. on ? resistance vs. drain current and gate voltage i d, drain current (amps) ? 50 10 ? 30 30 1.4 1.0 0.4 0.2 0 50 150 figure 5. on ? resistance variation with temperature t j , junction temperature ( c) 1.0 35 t j = ? 55 c i d = 5 a t j = 25 c 0.045 0.03 70 t j = 25 c i d = 5 a v gs = 10 v r ds(on), drain ? to ? source resistance (normalized) 2 25 c r ds(on), drain ? to ? source resistance ( ) 1.8 v gs = 10 v 210 10 figure 6. drain ? to ? source leakage current vs. voltage v ds , drain ? to ? source voltage (volts) v gs = 0 v i dss , leakage (na) t j = 150 c t j = 100 c 0.06 v gs = 5 v 10000 100000 100 5 v ds 10 v 0.055 020 10 25 3 79 8 2345 45 30 30 25 0.1 0.2 0.4 0.7 0.9 0.6 0.8 0.035 0.04 110 130 1000 10 15 1.5 2.5 3.5 678910 0.6 0.8 1.2 1.6 90 ? 10 40 10 25 35 15 5 4 0.5 3.5 1.5 2.5 4.5 20 v gs = 10 v v gs = 9 v v gs = 8 v v gs = 7 v v gs = 6 v v gs = 5 v v gs = 4 v v gs = 3 v t j = 25 c current limit inception region
nid5003n http://onsemi.com 4 typical performance curves 0.9 1 v sd , source ? to ? drain voltage (volts) figure 7. diode forward voltage vs. current i s , source current (amps) v gs = 0 v t j = 25 c 10 0.7 0.5 1 0.1 0.8 0.6 0.4
nid5003n http://onsemi.com 5 package dimensions dpak case 369c ? 01 issue o d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h ? t ? seating plane z dim min max min max millimeters inches a 0.235 0.245 5.97 6.22 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.180 0.215 4.57 5.45 s 0.025 0.040 0.63 1.01 u 0.020 ??? 0.51 ??? v 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? 123 4 style 2: pin 1. gate 2. drain 3. source 4. drain 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 mm inches scale 3:1 soldering footprint notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. nid5003n/d hdplus is a trademark of semiconductor components industries, llc (scillc) publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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